reverse rec o very time (note 2) t 150 250 500 ns characteristic symbol 4 pf 25 a we ight: 0.01 gr ams (approx.) case: sod-123fl, molded plastic surge overload rating to 25a peak ultra-fast recovery time ideally suited for automatic assembly low power loss classification rating 94v-o 1.3 v -65 to +150 c 35 70 140 280 420 560 800 v 50 100 200 400 600 800 1000 v features ! ! low f orward voltage drop, high efficiency ! ! ! ! plastic case material has ul flammability mechanical d a ta ! ! ter minals: solder plated, solderable per mil-std-750, method 2026 ! polarity: cathode band or cathode notch ! marking: type number ! ! lead free: for rohs / lead free version maximum ra t ings and electrical characteristics @t a =25c unl ess otherwise specified peak repet itive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r rms revers e voltage v r(rms) average rec tified output current @t l = 100c i o 1.0 a non-repeti t ive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm forward vo l tage @i f = 1. 0a v fm pe a k reverse current @t a = 25 c a t rated dc blocking voltage @t a = 100 c i rm 10 500 a ty pi cal junction capacitance (note 2) c j ty pi cal thermal resistance (note 3) r jl 180 c / w operati ng and s torage temperature range t j, t stg note: 1. m easured with i f = 0.5a , i r = 1 . 0a, i rr = 0. 25a. see figure 5. 2. measured at 1.0 mhz and applied reverse voltage of 4.0 v dc. 3. mounted on p.c. board with 8.0mm 2 land area. 1 of 2 1.0 0.2 2.8 0.1 1.9 0. 1 cathode b and top view 3.7 0.2 0.6 0.25 1.4 0 . 15 0.10-0.30 sod - 123fl dimensions in millimeters glass passivated device ! ! 101w fr units z ibo seno electronic engineering co., ltd. www.senocn.com 1.0a gl a ss passivated fast recovery diode rr 102w fr 103w fr 104w fr 105w fr 106w fr 107w fr fr101w ? fr107w fr101w C fr107w a l l d a t a s h e e t
i , peak for ward surge current (a) fsm 0 10 20 30 1 10 100 number of cycles at 60 hz fig. 3 peak forward surge current pulse width 8.3ms single half-sine-w ave (jedec method) 1 10 100 1 10 100 c , cap acit ance (pf) j v , reverse vol tage (v) fig. 4 typical junction capacitance r t = 25c f = 1mhz j 0 0.2 0.4 0.6 0.8 1.0 25 50 75 100 125 150 175 200 i , a verage fwd rectified current (a) (av) t , ambient tempera ture (c) fig. 1 forward derating curve a single phase half-wave 60 hz resistive or inductive load 50v dc approx 50 ni (non-inductive) w 10 ni w 1.0 ni w oscilloscope (note 1) pulse generator (note 2) device under test t rr settimebasefor5 /10ns/cm +0.5a 0a -0.25a -1.0a notes: 1. rise t ime = 7.0ns max. input impedance = 1.0m , 22pf. 2. rise time = 10ns max. input impedance = 50 . w w fig. 5 reverse recovery time characteristic and test circuit (+) (+) (-) (-) 0.01 0.1 1.0 10 0.6 0.8 1.0 1.2 1.4 i , inst ant aneous fwd current (a) f v , inst ant aneous forward voltage (v) fig. 2 typical forward characteristics f t = 25c j pulse width = 300 s 2 of 2 z ibo seno electronic engineering co., ltd. www.senocn.com fr101w ? fr107w fr101w C fr107w a l l d a t a s h e e t
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